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| MRF1035MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. PACKAGE STYLE .280 4L PILL (A) A C .100x45 FEATURES: * Internal Input Matching Network * PG = 10 dB at 35 W/1090 MHz * OmnigoldTM Metalization System C B B B OG E MAXIMUM RATINGS IC VCBO VCES PDISS TJ TSTG JC 2.0 A 60 V DIM D E F MINIMUM inches / mm MAXIMUM inches / mm 60 V 35 W PEAK A B C D .095 / 2.41 .195 / 4.95 1.000 / 25.40 .004 / 0.10 .050 / 1.27 .105 / 2.67 .205 / 5.21 .007 / 0.18 .065 / 1.65 .145 / 3.68 -65 C to +200 C -65 C to +150 C 5.0 C/W E F G .275 / 6.99 .285 / 7.21 CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICBO hFE Cob PG C IC = 20 mA IC = 20 mA TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 60 60 4.0 2.0 UNITS V V V mA --pF dB % IE = 2.0 mA VCE = 50 V VCE = 5.0 V VCB = 50 V VCC = 50 V POUT = 35 W IC = 500 mA f = 1.0 MHz f = 1090 MHz 10 10 10 30 12.4 34 100 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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